P-doped region below the AlGaN/GaN interface for normally-off HEMT

Saleem Hamady (1) , Frédéric Morancho (1) , Bilal Beydoun (2) , Patrick Austin (1) , Mathieu Gavelle (3)

1 LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 UL-GET/LPE - Université Libanaise
3 DOCC - CEA Tech Occitanie

Development of a new design for enhancement-mode AlGaN/GaN HEMT is presented. The normally-off operation was achieved by burying a p-GaN region below the AlGaN/GaN interface only below the gate. Simulation results show that the proposed technique is capable of shifting the threshold voltage to positive values, making the HEMT normally-off. To address the advantages and drawbacks of the proposed structure a comparison with the normally-off Gate injection transistor (GIT) was performed. The proposed structure seems to be more effective when it comes to the p-doping concentration required to achieve normally-off operation and offers superior confinement for the two dimensional electron gas. On the other hand, the low forward gate voltage limits the increase of the threshold voltage.

Domaines: Electronique; Sciences de l'ingénieur [physics]; Micro et nanotechnologies/Microélectronique; Energie électrique

Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. P-doped region below the AlGaN/GaN interface for normally-off HEMT. 16th Conference on Power Electronics and Applications, EPE’14-ECCE Europe, Aug 2014, Lappeenranta, Finland. pp.1 - 8, ⟨10.1109/EPE.2014.6910769⟩. ⟨hal-01108922⟩