SiOx /SiNy multilayers for photovoltaic and photonic applications

Ramesh Pratibha Nalini (1) , Larysa Khomenkova (1) , Olivier Debieu (1) , Julien Cardin (1) , Christian Dufour (1) , Marzia Carrada (2) , Fabrice Gourbilleau (1)

1 CIMAP - UMR 6252 - Centre de recherche sur les Ions, les MAtériaux et la Photonique
2 CEMES - Centre d'élaboration de matériaux et d'études structurales

Microstructural, electrical, and optical properties of undoped and Nd 3+-doped SiO x /SiN y multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiN y as the alternating sublayer instead of SiO 2. A high density of silicon nanoclusters of the order 10 19 nc/cm 3 is achieved in the SiO x sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd 3+ emission in these multilayers in comparison with the SiO x /SiO 2 counterparts offers promising future photonic applications. PACS: 88.40.fh (Advanced materials development), 81.15.cd (Deposition by sputtering), 78.67.bf (Nanocrystals, nanoparticles, and nanoclusters).

Mots clés: SiOx /SiNy; multilayers; Nd 3+ doping; photoluminescence; XRD; absorption coefficient; conductivity

Domaines: Matière Condensée [cond-mat]; Micro et nanotechnologies/Microélectronique; Matériaux; Optique / photonique

Ramesh Pratibha Nalini, Larysa Khomenkova, Olivier Debieu, Julien Cardin, Christian Dufour, et al.. SiOx /SiNy multilayers for photovoltaic and photonic applications. Nanoscale Research Letters, 2012, 7 (1), pp.1-6. ⟨10.1186/1556-276X-7-124⟩. ⟨hal-01139850⟩