High termination efficiency using polyimide trench for high voltage diamond Schottky diode

Houssam Arbess (1) , Karine Isoird (1) , Moustafa Zerarka (1) , Henri Schneider (1) , Marie-Laure Locatelli (2) , Dominique Planson (3)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LAPLACE-MDCE - Matériaux Diélectriques dans la Conversion d’Energie
3 EE - Ampère, Département Energie Electrique

Using finite element simulations with Sentaurus TCAD (Technology Computer-Aided Design) software, a progress from simple and classic termination for a Schottky diode to new topology termination has been studied in this paper. A polyimide trench under field plate termination has been used. The efficiency increases from 67% for a simple field plate with optimum parameters up to 97 %. The maximum electric field in the termination dielectric has been evaluated also. A wide study of the termination geometry has been made in order to extract the optimum parameters in two directions. The first one is to obtain a high efficiency regarding the breakdown voltage, and the second one is to have the minimum electric field peak at the termination edge.

Mots clés: Polyimide; Diamond; TCAD Simulation; Schottky; Field plate; Termination

Domaines: Micro et nanotechnologies/Microélectronique

Houssam Arbess, Karine Isoird, Moustafa Zerarka, Henri Schneider, Marie-Laure Locatelli, et al.. High termination efficiency using polyimide trench for high voltage diamond Schottky diode. Diamond and Related Materials, 2015, 58, pp.149-154. ⟨10.1016/j.diamond.2015.07.006⟩. ⟨hal-01218796⟩