Modeling Magnetic Near-Field Injection at Silicon Die Level

Alexandre Boyer (1) , Bertrand Vrignon (2) , Manuel Cavarroc (3)

1 LAAS-ESE - Équipe Énergie et Systèmes Embarqués
2 Freescale Semiconductor
3 LAAS-I2C - Service Instrumentation Conception Caractérisation

Near-field injection at silicon die level is a promising application for various area such as the analyses of integrated circuit (IC) susceptibility to electromagnetic interferences and security for cryptographic applications. This paper presents a first attempt to simulate the voltage induced on integrated circuit interconnects by a magnetic field probe. The validation of the simulation results is based on near-field injection performed on a test chip containing various types of interconnects and on-chip voltage sensors.

Mots clés: modeling; on-chip sensor; near-field injection; integrated circuit; susceptibility; electromagnetic attack

Domaines: Electronique; Electromagnétisme

Alexandre Boyer, Bertrand Vrignon, Manuel Cavarroc. Modeling Magnetic Near-Field Injection at Silicon Die Level. IEEE Transactions on Electromagnetic Compatibility, 2015, 58 (1), pp. 257-269. ⟨10.1109/TEMC.2015.2486041⟩. ⟨hal-01225324⟩