HIGH-K THIN FILMS AS DIELECTRIC TRANSDUCERS FOR FLEXURAL M/NEMS RESONATORS

Cécile Fuinel (1) , Khadim Daffé (1) , Adrian Laborde (2) , Olivier Thomas (3) , Laurent Mazenq (2) , Liviu Nicu (1) , Thierry Leichle (1) , Bernard Legrand (4)

1 LAAS-NBS - Équipe NanoBioSystèmes
2 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
3 LSIS - Laboratoire des Sciences de l'Information et des Systèmes
4 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

We show that a nanometer-thick high-K material can be used as an electromechanical transducer to actuate the flexural mode of micro/nanoresonators. In this study, a 15 nm silicon nitride layer is employed on top of 320 nm thick silicon beams. The devices, smaller by 2 orders of magnitude than in previous studies, are successfully driven into vibration at resonance frequencies greater than 1 MHz, nanometer amplitudes, and quality factors greater than 2,000 in vacuum. We also deduce the transduction efficiency from a thermomechanical displacement noise calibration. This work paves the way for efficient electromechanical transduction scheme at the nanoscale, which would be further strengthened by the use of high-K dielectric materials obtained by atomic layer deposition.

Domaines: Micro et nanotechnologies/Microélectronique

Cécile Fuinel, Khadim Daffé, Adrian Laborde, Olivier Thomas, Laurent Mazenq, et al.. HIGH-K THIN FILMS AS DIELECTRIC TRANSDUCERS FOR FLEXURAL M/NEMS RESONATORS. The 29th IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2016), IEEE, Jan 2016, Shanghai, China. ⟨10.1109/MEMSYS.2016.7421850⟩. ⟨hal-01279717⟩