Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors. Broad experience on MOCVD techniques and high-k materials

Magali Brunet (1) , Emmanuel Scheid (1) , Karolina Galicka-Fau (2) , Michel Andrieux (2) , Corinne Legros (2) , Isabelle Gallet (2) , Michaële Herbst (2) , Sylvie Schamm-Chardon (3)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 ICMMO - Institut de Chimie Moléculaire et des Matériaux d'Orsay
3 CEMES - Centre d'élaboration de matériaux et d'études structurales

The present work deals with high-density integrated capacitors for output filters in future micro DC-DC converters. To reach high capacitance density, 3D structures were created in silicon with DRIE followed by MOCVD of ZrO2 (100 nm thick). The step coverage revealed two deposition regimes: a surface reaction controlled regime for cavities aspect ratio lower than 2 and a diffusion controlled regime for higher aspect ratios. The ZrO2 films present mostly a cubic/tetragonal structure. The permittivity extracted from the measurement is close to 27. These results are discussed with static dielectric responses calculated in literature.

Mots clés: step coverage; 3D structures; MIS capacitor; MOCVD; ZrO2; High-k; thin film

Domaines: Micro et nanotechnologies/Microélectronique

Magali Brunet, Emmanuel Scheid, Karolina Galicka-Fau, Michel Andrieux, Corinne Legros, et al.. Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors. Broad experience on MOCVD techniques and high-k materials. Microelectronic Engineering, 2009, 86 (10), pp.2034-2037. ⟨10.1016/j.mee.2009.01.034⟩. ⟨hal-01443057⟩