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3D GaP/Si(001) growth mode and antiphase boundaries

Abstract : In this work, we investigate the relationship between the surface roughness and antiphase domains in GaP layers grown by MBE on a vicinal Si (001) substrate. The main role of the starting Si surface before III‐V overgrowth is first discussed. Structural properties of antiphase domains (APDs) are investigated at the atomic scale by Scanning Tunneling Microscopy (STM) and Transmission Electron Microscopy (TEM). The correlation between the 3D growth mode and the emerging antiphase boundaries (APBs) is discussed in terms of surface/interface energy, supported by DFT calculations.
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Submitted on : Tuesday, March 28, 2017 - 1:05:08 PM
Last modification on : Thursday, January 14, 2021 - 3:33:36 AM


  • HAL Id : hal-01497144, version 1


Ida Lucci, Simon Charbonnier, Yanping Wang, M. Bahri, Maxime Vallet, et al.. 3D GaP/Si(001) growth mode and antiphase boundaries. 19th International Conference on Molecular-Beam Epitaxy (IC-MBE 2016), Sep 2016, Montpellier, France. ⟨hal-01497144⟩



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