Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films

Abstract : Silicon nanocrystals have been produced by thermal annealing of SiNx thin film obtained by low pressure chemical vapor deposition using a mixture between disilane and ammonia. Morphological, structural, and photoluminescence properties of the thin film were investigated using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and photoluminescence spectroscopy. The results revealed a high crystallinity of film with a crystalline volume fraction exceeded 70 %, and a dominance of silicon nanocrystallites having the sizes within the range 2.5-5 nm and density ~1.98.10 12 /cm 2. The PL peaks consist of nanocrystalline silicon and amorphous silicon. The luminescence from the silicon nanocrystals was dominant.
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Hakim Haoues, Hachemi Bouridah, Mahmoud Riad Beghoul, Farida Mansour, Riad Remmouche, et al.. Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films. Materials Science in Semiconductor Processing, Elsevier, 2013, 16 (6), pp.1849-1852. ⟨10.1016/j.mssp.2013.07.019⟩. ⟨hal-01508074⟩

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