Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films

Hakim Haoues 1 Hachemi Bouridah 1 Mahmoud Riad Beghoul 1 Farida Mansour 2 Riad Remmouche 1 Pierre Temple-Boyer 3
1 Département d’Electronique
2 Département d'Electronique
3 LAAS-MICA - Équipe MICrosystèmes d'Analyse
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : Silicon nanocrystals have been produced by thermal annealing of SiNx thin film obtained by low pressure chemical vapor deposition using a mixture between disilane and ammonia. Morphological, structural, and photoluminescence properties of the thin film were investigated using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and photoluminescence spectroscopy. The results revealed a high crystallinity of film with a crystalline volume fraction exceeded 70 %, and a dominance of silicon nanocrystallites having the sizes within the range 2.5-5 nm and density ~1.98.10 12 /cm 2. The PL peaks consist of nanocrystalline silicon and amorphous silicon. The luminescence from the silicon nanocrystals was dominant.
Keywords : Crystallinity Crystallite size Photoluminescence 2 Silicon nanocrystals
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Journal articles
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https://hal.archives-ouvertes.fr/hal-01508074
Contributor : Pierre Temple-Boyer <>
Submitted on : Thursday, April 13, 2017 - 5:06:35 PM
Last modification on : Saturday, October 26, 2019 - 1:32:09 AM

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CNRS | INSA-TOULOUSE | LAAS | LAAS-MICRO-NANO-BIO-TECHNOLOGIES | LAAS-MICA | INSA-GROUPE | UNIV-TLSE3 | UT1-CAPITOLE | UNIV-TLSE2

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Hakim Haoues, Hachemi Bouridah, Mahmoud Riad Beghoul, Farida Mansour, Riad Remmouche, et al.. Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films. Materials Science in Semiconductor Processing, Elsevier, 2013, 16 (6), pp.1849-1852. ⟨10.1016/j.mssp.2013.07.019⟩. ⟨hal-01508074⟩

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