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Journal articles
Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films
Abstract : Silicon nanocrystals have been produced by thermal annealing of SiNx thin film obtained by low pressure chemical vapor deposition using a mixture between disilane and ammonia. Morphological, structural, and photoluminescence properties of the thin film were investigated using X-ray diffraction, scanning electron microscopy, Raman spectroscopy and photoluminescence spectroscopy. The results revealed a high crystallinity of film with a crystalline volume fraction exceeded 70 %, and a dominance of silicon nanocrystallites having the sizes within the range 2.5-5 nm and density ~1.98.10 12 /cm 2. The PL peaks consist of nanocrystalline silicon and amorphous silicon. The luminescence from the silicon nanocrystals was dominant.
https://hal.archives-ouvertes.fr/hal-01508074
Contributor : Pierre Temple-Boyer <>
Submitted on : Thursday, April 13, 2017 - 5:06:35 PM
Last modification on : Friday, January 10, 2020 - 9:10:15 PM
Contributor : Pierre Temple-Boyer <>
Submitted on : Thursday, April 13, 2017 - 5:06:35 PM
Last modification on : Friday, January 10, 2020 - 9:10:15 PM
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