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Study of field effect transistors for the sodium ion detection using fluoropolysiloxane-based sensitive layers

Arnaud Cazalé 1, 2 William Sant 1 Jérôme Launay 2 Frédéric Ginot 1 Pierre Temple-Boyer 2
2 LAAS-MICA - Équipe MICrosystèmes d'Analyse
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : A membrane for the development of Na + sodium ion sensitive field effect transistor (pNa-ISFET) is described in this work. This membrane is based on a fluoropolysiloxane (FPSX) polymer modified by sodium ionophore. The advantages of using such polymer are several: it permits good adhesion properties on silicon-based layers, it is characterized by a lower resistivity and it is fully compatible with ink jet printing technique. Thus, FPSX membranes were developed in the frame of a pH-ChemFET / Ag/AgCl reference electrode industrial fabrication process. Studies involve the deposition of FPSX-based, sodium ion sensitive layers by ink jet printing, the integration and characterization of Ag/AgCl reference electrode, as well as the pNa measurement in solution. Thus, whatever the reference electrode used, FPSX-based pNa-ISFET microsensors show good detection properties with sensitivity around 57 mV/pNa, detection limit around 10-4 M, low pH interferences (7 mV/pH in the [9-12] basic range) and selectivity coefficient versus potassium K + ion-3. Final application is done through analysis of real sweat samples.
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Arnaud Cazalé, William Sant, Jérôme Launay, Frédéric Ginot, Pierre Temple-Boyer. Study of field effect transistors for the sodium ion detection using fluoropolysiloxane-based sensitive layers. Sensors and Actuators B: Chemical, Elsevier, 2013, 177, pp.515-521. ⟨10.1016/j.snb.2012.11.054⟩. ⟨hal-01508086⟩

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