Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading

Emmanuel Marcault (1) , David Trémouilles (2) , Karine Isoird (2) , Frédéric Morancho (2) , Mathieu Gavelle (1)

1 DOCC - CEA Tech Occitanie
2 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie

Power GaN HEMT components offer very interesting performances (high voltage, high current, low on-resistance, fast switching), but the GaN material has some defects that can lead to carrier trapping, which induces dynamic electrical phenomena. Thereby, static measurement of the GaN HEMT components requires some reconsideration. In this work, we analyze how the typical static electrical parameters evolve as a function of time and how much they deviate from the DC measurements.

Domaines: Electronique

Emmanuel Marcault, David Trémouilles, Karine Isoird, Frédéric Morancho, Mathieu Gavelle. Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading. 18th European Conference on Power Electronics and Applications (EPE'2016), Sep 2016, Karlsruhe, Germany. ⟨10.1109/EPE.2016.7695492⟩. ⟨hal-01556254⟩