Solution layer deposition: A technique for the growth of ultra-pure manganese oxides on silica at room temperature

Jérémy Cure; Kilian Piettre; Yannick Coppel; Eric Beche; Jérôme Esvan; Vincent Colliere; Bruno Chaudret; Pierre Fau

doi:10.1002/anie.201509715

Solution layer deposition: A technique for the growth of ultra-pure manganese oxides on silica at room temperature

Jérémy Cure ^{1, 2} Kilian Piettre ^{1, 2} Yannick Coppel ¹ Eric Beche ³ Jérôme Esvan ⁴ Vincent Colliere ¹ Bruno Chaudret ⁵ Pierre Fau ¹

1 LCC - Laboratoire de chimie de coordination

2 STMicroelectronics

3 PROMES - Procédés, Matériaux et Energie Solaire

4 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux

5 LPCNO - Laboratoire de physique et chimie des nano-objets

Abstract : With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high-purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal–organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal–organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid-state 29Si MAS NMR, XPS, SIMS, and HRTEM.

Keywords : Synthesis MgO on Silica Layer deposition

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Journal articles

Domain :

Chemical Sciences / Material chemistry

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Submitted on : Wednesday, July 19, 2017 - 2:43:58 PM
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