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Journal articles
Solution layer deposition: A technique for the growth of ultra-pure manganese oxides on silica at room temperature
Abstract : With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high-purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal–organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal–organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid-state 29Si MAS NMR, XPS, SIMS, and HRTEM.
Cited literature [13 references]
https://hal.archives-ouvertes.fr/hal-01565099
Contributor : Open Archive Toulouse Archive Ouverte (oatao) <>
Submitted on : Wednesday, July 19, 2017 - 2:43:58 PM
Last modification on : Friday, December 18, 2020 - 2:52:06 PM
Contributor : Open Archive Toulouse Archive Ouverte (oatao) <>
Submitted on : Wednesday, July 19, 2017 - 2:43:58 PM
Last modification on : Friday, December 18, 2020 - 2:52:06 PM
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