New triggering-speed-characterization method for diode-triggered SCR using TLP

Mouna Mahane (1) , David Trémouilles (1) , Marise Bafleur (2) , Benjamin Thon (3) , Marianne Diatta (1) , Lionel Jaouen (3)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LAAS-ESE - Équipe Énergie et Systèmes Embarqués
3 ST-TOURS - STMicroelectronics [Tours]

The key parameters in the optimization of the Diode Triggered Silicon-Controlled Rectifier (DTSCR) as a RF ESD protection, are the turn-on time and the trigger-voltage overshoots seen before the SCR turns on, during very fast ESD transients [1]. But at this time, there is no normalized method to evaluate and report the ESD device turn-on speed [2]. Such a method would be required to effectively compare device performance. In this work a new method , based on stored-charge, is investigated to characterize the triggering speed of DTSCR using Transmission Line Pulsing (TLP) measurements.

Mots clés: Critical charge; DTSCR; Electrostatic discharge (ESD); IEC; Radio frequency (RF); TLP; Turn-on time

Domaines: Micro et nanotechnologies/Microélectronique; Electronique

Mouna Mahane, David Trémouilles, Marise Bafleur, Benjamin Thon, Marianne Diatta, et al.. New triggering-speed-characterization method for diode-triggered SCR using TLP. Microelectronics Reliability, 2017, 76-77, pp.692 - 697. ⟨10.1016/j.microrel.2017.07.063⟩. ⟨hal-01643028⟩