Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect

Guillermo Ortiz (1) , Christian Strenger (2) , Viktoriya Uhnevionak , A Burenkov , Anton J Bauer , Peter Pichler , Fuccio Cristiano (1) , Eléna Bedel-Pereira (1) , Vincent Mortet (3, 4)

1 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
2 Fraunhofer IISB - Fraunhofer Institute for Integrated Systems and Device Technology
3 LAAS - Laboratoire d'analyse et d'architecture des systèmes
4 CAS - Czech Academy of Sciences [Prague]

Domaines: Micro et nanotechnologies/Microélectronique

Guillermo Ortiz, Christian Strenger, Viktoriya Uhnevionak, A Burenkov, Anton J Bauer, et al.. Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect. Applied Physics Letters, 2015, 106 (6), pp.062104. ⟨10.1063/1.4908123⟩. ⟨hal-01659149⟩