Development of all-around, SiO2/Al2O3 gate, suspended silicon nanowire chemical field effect transistors Si-nw-ChemFET

Ahmet Lale (1) , Auriane Grappin (1) , David Bourrier (2) , Laurent Mazenq (2) , Aurélie Lecestre (2) , Jérôme Launay (1) , Pierre Temple-Boyer (1)

1 LAAS-MICA - Équipe MICrosystèmes d'Analyse
2 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique

We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and " low cost " standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.

Mots clés: ChemFET; finFET; MOSFET; ISFET; silicon nanowire; biosensor; potentiometric sensor; nanosensor; microsensor; pH measurement; microfluidics; gate all-around

Domaines: Micro et nanotechnologies/Microélectronique

Ahmet Lale, Auriane Grappin, David Bourrier, Laurent Mazenq, Aurélie Lecestre, et al.. Development of all-around, SiO2/Al2O3 gate, suspended silicon nanowire chemical field effect transistors Si-nw-ChemFET. EUROSENSORS XXXI, Sep 2017, Paris, France. ⟨hal-01687839⟩