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Development of all-around, SiO2/Al2O3 gate, suspended silicon nanowire chemical field effect transistors Si-nw-ChemFET

Abstract : We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and " low cost " standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.
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https://hal.laas.fr/hal-01687839
Contributor : Pierre Temple-Boyer <>
Submitted on : Wednesday, February 7, 2018 - 7:15:41 PM
Last modification on : Friday, January 10, 2020 - 9:10:15 PM
Long-term archiving on: : Friday, May 4, 2018 - 3:49:24 PM

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  • HAL Id : hal-01687839, version 1

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Ahmet Lale, Auriane Grappin, David Bourrier, Laurent Mazenq, Aurélie Lecestre, et al.. Development of all-around, SiO2/Al2O3 gate, suspended silicon nanowire chemical field effect transistors Si-nw-ChemFET. EUROSENSORS XXXI, Sep 2017, Paris, France. ⟨hal-01687839⟩

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