200V, 4MV/cm lateral diamond MOSFET

Thanh-Toan Pham (1) , Julien Pernot (1) , C. Masante (1) , D. Eon (1) , E. Gheeraert (1) , G. Chicot (1) , F. Udrea (2) , Nicolas C. Rouger (3)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 CAM - University of Cambridge [UK]
3 LAPLACE-CS - Convertisseurs Statiques

Domaines: Electronique

Thanh-Toan Pham, Julien Pernot, C. Masante, D. Eon, E. Gheeraert, et al.. 200V, 4MV/cm lateral diamond MOSFET. 2017 IEEE International Electron Devices Meeting (IEDM), Dec 2017, San Francisco, United States. ⟨10.1109/IEDM.2017.8268458⟩. ⟨hal-01701734⟩