Spin transport in benzofurane bithiophene based organic spin valves

Mathieu Palosse (1) , Isabelle Séguy (2) , Eléna Bedel-Pereira (3) , Christina Villeneuve-Faure (4) , Charlotte Mallet (5) , Pierre Frère (5) , Bénédicte Warot-Fonrose (6) , Nicolas Biziere (6) , Jean-François Bobo (6)

1 LAAS-MICA - Équipe MICrosystèmes d'Analyse
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes
3 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
4 LAPLACE-DSF - Diélectriques Solides et Fiabilité
5 MOLTECH-Anjou
6 CEMES - Centre d'élaboration de matériaux et d'études structurales

In this paper we present spin transport in organic spin-valves using benzofurane bithiophene (BF3) as spacer layer between NiFe and Co ferromagnetic electrodes. The use of an AlO x buffer layer between the top electrode and the organic layer is discussed in terms of improvements of stacking topology, electrical transport and oxygen contamination of the BF3 layer. A study of magnetic hysteresis cycles evidences spin-valve behaviour. Transport properties are indicative of unshorted devices with non-linear I-V characteristics. Finally we report a magnetoresistance of 3% at 40 K and 10 mV in a sample with a 50 nm thick spacer layer, using an AlO x buffer layer.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Mathieu Palosse, Isabelle Séguy, Eléna Bedel-Pereira, Christina Villeneuve-Faure, Charlotte Mallet, et al.. Spin transport in benzofurane bithiophene based organic spin valves. AIP Advances, 2014, 4 (1), pp.017117. ⟨10.1063/1.4862675⟩. ⟨hal-01707035⟩