Germanium condensation for co-integration: Strain study by dark-field electron holography

Victor Boureau (1) , Daniel Benoit (2) , Bénédicte Warot-Fonrose (1) , Martin Hÿtch (1) , Alain Claverie (1)

1 CEMES - Centre d'élaboration de matériaux et d'études structurales
2 ST-CROLLES - STMicroelectronics [Crolles]

We study the strain characteristics of thin SiGe layers on insulator processed by the germanium condensation technique. We perform dark-field electron holography measurements and show the relation between strain and Ge content in the layers. The characteristics of the condensation process are discussed for the realization of co-integrated MOS structures. © 2014 IEEE.

Mots clés: BiCMOS technology; CMOS integrated circuits; Condensation; Electron holography; Holography; Silicon; Silicon on insulator technology; Strain measurement; Transmission electron microscopy; CMOS processs; Cointegration; Condensation process; Condensation techniques; Dark-field electron holographies; Silicon Germanium; Strain characteristics; Thin SiGe layer; Germanium

Domaines: Physique [physics]

Victor Boureau, Daniel Benoit, Bénédicte Warot-Fonrose, Martin Hÿtch, Alain Claverie. Germanium condensation for co-integration: Strain study by dark-field electron holography. Nanotechnology Materials and Devices Conference (NMDC), 2014 IEEE 9th, 2014, Unknown, Unknown Region. pp.34-36, ⟨10.1109/NMDC.2014.6997415⟩. ⟨hal-01719498⟩