(Invited) Low Resistance Contacts to Nanoscale Semiconductor Devices, ECS Transactions, vol.75, issue.8, pp.513-523, 2016. ,
DOI : 10.1149/07508.0513ecst
Semiconductor Material and Device Characterization, pp.29-34, 2006. ,
DOI : 10.1002/0471749095
Dopant, composition and carrier profiling for 3D structures, Materials Science in Semiconductor Processing, vol.62, pp.31-48, 2017. ,
DOI : 10.1016/j.mssp.2016.10.029
Automated Hall profiling system for the characterisation of semiconductors at room and liquid nitrogen temperatures, Journal of Physics E: Scientific Instruments, vol.21, issue.5, pp.470-479, 1988. ,
DOI : 10.1088/0022-3735/21/5/011
Study of Carrier Mobility of Low-Energy High-Dose Ion Implantations, IEEE Transactions on Plasma Science, vol.39, issue.1, pp.587-592, 2011. ,
DOI : 10.1109/TPS.2010.2089702
Applied Physic Letters, 1979. ,
Applied Physic Letters, 2012. ,
Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2, Journal of Electronic Materials, vol.10, issue.8, pp.805-810, 1992. ,
DOI : 10.1557/PROC-146-345
Etude expérimentale de l'interdiffusion Ge-Si à partir de sources solides Germanium sur Silicium -Application à la formation de couches graduelles Si1-xGex pour les transistors pMOSFETs, pp.168-183, 2008. ,
Silicon Surface Analysis and Very Thin Silicon Oxide Characterization after HF/Ethanol Preoxidation Silicon Cleaning The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 Deal, pp.215-222, 1992. ,
Philips Technical Review, pp.220-224, 1958. ,
Hallgeneratoren mit kleinem linearisierungsfehler, Solid-State Electronics, vol.11, issue.1, pp.173-182, 1968. ,
DOI : 10.1016/0038-1101(68)90149-4
Elektronik und Übertragunstechnik, pp.309-313, 1973. ,
Solid-State Electronics, pp.539-543, 1977. ,
Measured In-plane hole drift and hall mobility in heavily-doped strained p-type Si1???xGex, Journal of Electronic Materials, vol.96, issue.3, pp.319-321, 1993. ,
DOI : 10.1007/BF02661384
alloys, Journal of Applied Physics, vol.16, issue.3, pp.1264-1269, 1997. ,
DOI : 10.1103/PhysRevB.54.11317
Quantum-Confinement Effect in Ultrathin Si Layer of Silicon-on-Insulator Substrate, Japanese Journal of Applied Physics, vol.40, issue.Part 2, No. 2B, pp.131-133, 2001. ,
DOI : 10.1143/JJAP.40.L131
Donor deactivation in silicon nanostructures, Nature Nanotechnology, vol.41, issue.2, pp.103-107, 2009. ,
DOI : 10.1002/j.1538-7305.1962.tb02415.x
Optimisation des jonctions de dispositifs (FDSOI, TriGate) fabriqués à faible température pour l'intégration 3D séquentielle, pp.88-96, 2016. ,
The surface properties of oxidized silicon, Technische Hogeschool Eindhoven, pp.5-9, 1967. ,
DOI : 10.1007/978-3-662-40210-8
Surface???depletion effect correction to nonuniform carrier distributions by Hall measurements, Journal of Applied Physics, vol.33, issue.11, pp.5070-5075, 1987. ,
DOI : 10.1063/1.331289
Contributions à l'étude de la diffusion, de l'agglomération et de l'activation du Bore dans le Silicium : Application à la réalisation de jonctions ultraminces P+, pp.127-138, 2003. ,