Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect

Abstract : The reduction of the contact resistance RC is one of the most challenging issues related to the miniaturisation of advanced MOSFET architectures, including FDSOI technology (Fully Depleted Silicon-On-Insulator). RC strongly depends on the active dopant concentration at the semiconductor/salicide interface. It is therefore essential that electrical activation at different depths within a doped layer is reliably determined to optimise the fabrication processes. In this paper, we firstly present a Differential Hall Effect (DHE) method which allows measuring the active dopant concentration profile close to the surface with nm resolution for ultra-shallow doped Si1-xGex and Si layers. Then, we present DHE measurements made on junctions processed with advanced techniques, including nsec LTA and msec DSA anneals.
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https://hal.laas.fr/hal-01735436
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Submitted on : Thursday, March 15, 2018 - 10:37:57 PM
Last modification on : Thursday, January 16, 2020 - 3:18:09 PM
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  • HAL Id : hal-01735436, version 1

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Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba, et al.. Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain. ⟨hal-01735436⟩

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