Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect

Richard Daubriac (1) , Emmanuel Scheid (1) , S. Joblot (2) , R. Beneyton (2) , P Acosta Alba (3) , S. Kerdiles (3) , Fuccio Cristiano (1)

1 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
2 ST-CROLLES - STMicroelectronics [Crolles]
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

The reduction of the contact resistance RC is one of the most challenging issues related to the miniaturisation of advanced MOSFET architectures, including FDSOI technology (Fully Depleted Silicon-On-Insulator). RC strongly depends on the active dopant concentration at the semiconductor/salicide interface. It is therefore essential that electrical activation at different depths within a doped layer is reliably determined to optimise the fabrication processes. In this paper, we firstly present a Differential Hall Effect (DHE) method which allows measuring the active dopant concentration profile close to the surface with nm resolution for ultra-shallow doped Si1-xGex and Si layers. Then, we present DHE measurements made on junctions processed with advanced techniques, including nsec LTA and msec DSA anneals.

Mots clés: FDSOI; contact resistance; shallow junctions; Differential Hall Effect

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Richard Daubriac, Emmanuel Scheid, S. Joblot, R. Beneyton, P Acosta Alba, et al.. Dopant Activation in Ultra-thin SiGeOI and SOI layers characterised by Differential Hall Effect. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Mar 2018, Grenade, Spain. ⟨hal-01735436⟩