Junction technology outlook for sub-28nm FDSOI CMOS, 2014 International Workshop on Junction Technology (IWJT) ,
DOI : 10.1109/IWJT.2014.6842050
Etude expérimentale de l'interdiffusion Ge-Si à partir de sources solides Germanium sur Silicium Application à la formation de couches graduelles Si 1-x Ge x pour les transistors pMOSFETs, pp.168-183, 2008. ,
Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2, Journal of Electronic Materials, vol.10, issue.8, p.805, 1992. ,
DOI : 10.1557/PROC-146-345
Differential Hall analysis of ultra-shallow carrier profiles using X-ray photoelectron spectroscopy for nanometre depth resolution, AIP Conference Proceedings 1496, p.152, 2012. ,
Hole mobility measurements in heavily doped Si/sub 1-x/Ge/sub x/ strained layers, IEEE Transactions on Electron Devices, vol.41, issue.7, pp.1273-1281 ,
DOI : 10.1109/16.293358