InGaN/GaN short-period superlattices: synthesis, properties, applications

A. F. Tsatsulnikov , W. V. Lundin , A. V. Sakharov , E. E. Zavarin , S. O. Usov , A. E. Nikolaev , N. V. Kryzhanovskaya , V. S. Sizov , M. A. Synitsin , E. V. Yakovlev , A. E. Chernyakov , A. L. Zakgeim , Nikolay Cherkashin (1) , Martin Hÿtch

1 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme

InGaN/GaN short‐period superlattices were fabricated using method based on cycle conversion of surface InGaN layer to GaN by applying of growth interruptions in hydrogen atmosphere. SPSLs having total thickness from 12 nm to 120 nm were grown and investigated by combination of optical methods, XRD and high resolution transmission electron microscopy (HRTEM) with geometric phase analysis. Blue, deep green (540‐560 nm) and monolithic white LEDs (containing in active region green and blue InGaN QWs separated by the SPSL or GaN barrier) were grown and investigated. Deep green LEDs have maximal external quantum efficiency of 8‐16% in the range of 560‐540 nm correspondingly. Monolithic white LED structures with CCT in the range of 5000‐6000 K have maximal external quantum efficiency of more than 6%. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Domaines: Physique [physics]

A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, et al.. InGaN/GaN short-period superlattices: synthesis, properties, applications. physica status solidi (c), 2011, 8 (7-8), pp.2308--2310. ⟨10.1002/pssc.201001040⟩. ⟨hal-01736040⟩