Strain Mapping of Layers and Devices Using Electron Holography

Alain Claverie (1) , Nikolay Cherkashin (2) , Florian Hüe (1) , Shay Reboh (1) , Florent Houdellier (1) , Etienne Snoeck (1) , Martin Hÿtch (1)

1 CEMES - Centre d'élaboration de matériaux et d'études structurales
2 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme

We present the HoloDark technique which has recently been invented and allows one to map strain in two dimensions in layers and devices with nanometer resolution, high precision and large field of view. The technique is based on electron holography and is applicable to all standard focused-ion beam FIB prepared crystalline samples. We show a panorama of typical results obtained in SiGe stacks, ion implanted silicon, strained silicon channel nMOS and pMOS type transistors and in the challenging case of strained silicon FinFETs, In such materials and structures, the HoloDark technique, although still perfectible, appears as the only technique able to provide reliable and extended data against which simulations can be calibrated.

Domaines: Physique [physics]

Alain Claverie, Nikolay Cherkashin, Florian Hüe, Shay Reboh, Florent Houdellier, et al.. Strain Mapping of Layers and Devices Using Electron Holography. ECS Trans. 2010, 2010, Unknown, Unknown Region. ⟨10.1149/1.3487533⟩. ⟨hal-01736051⟩