Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation

V. Ioannou-Sougleridis (1) , P. Dimitrakis (1) , V.Em. Vamvakas (1) , P. Normand (1) , Caroline Bonafos (2) , Sylvie Schamm-Chardon (3) , Nikolay Cherkashin (3) , Gérard Benassayag (3) , M. Perego (4) , M. Fanciulli (4)

1 NCSR - National Center for Scientific Research "Demokritos"
2 CEMES - Centre d'élaboration de matériaux et d'études structurales
3 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
4 Laboratorio Nazionale MDM CNR-INFM

This work presents an alternative method for the formation of the top oxide in oxide-nitride-oxide structures. The method utilizes low-energy (1 keV) Si ion implantation into thin oxide-nitride stacks, followed by low temperature wet oxidation. Transmission electron microscopy examination clearly indicates the formation of a three-layer structure, verified also by Time-of flight secondary ion mass spectrometry. The electrical characteristics of the oxide-nitride-oxide stacks exhibit strong trapping effects and excellent retention characteristics resulting to a 1.5 V 10-year memory window at 125 °C.

Domaines: Physique [physics]

V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide memory stacks formed by low-energy Si ion implantation into nitride and wet oxidation. Microelectronic Engineering, 2007, 84 (9-10), pp.1986--1989. ⟨10.1016/j.mee.2007.04.068⟩. ⟨hal-01736069⟩