Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates

Nikolay Cherkashin (1) , Martin Hÿtch (2) , Etienne Snoeck (2) , Florian Hüe (2) , J.M. Hartmann (3) , Y. Bogumilowicz (4) , Alain Claverie (1)

1 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
2 CEMES - Centre d'élaboration de matériaux et d'études structurales
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
4 STMicroelectronics

This paper reports on quantitative measurements of strain in a 7.5 nm compressive strained Ge/5.1 nm tensile strained Si bi-layer grown by reduced pressure chemical vapour deposition on top of a relaxed Si0.5Ge0.5 virtual substrate. Geometric phase analysis of high resolution transmission electron microscopy images acquired using the SACTEM-Toulouse, an aberration-corrected transmission electron microscope, is used to quantify the strain within s-Ge and s-Si layers. Finite element simulations are carried out to estimate the impact of strain relaxation in thin areas of a TEM specimen. Experimental results are compared with the predictions of elasticity theory and finite element simulations.

Domaines: Physique [physics]

Nikolay Cherkashin, Martin Hÿtch, Etienne Snoeck, Florian Hüe, J.M. Hartmann, et al.. Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2006, 253 (1-2), pp.145-148. ⟨10.1016/j.nimb.2006.10.051⟩. ⟨hal-01736071⟩