Time dependence study of hydrogen-induced defects in silicon during thermal anneals

S. Personnic (1) , A. Tauzin (2) , K.K. Bourdelle (1) , F. Letertre (1) , N. Kernevez (2) , F. Laugier (2) , Nikolay Cherkashin (3) , Alain Claverie (3) , R. Fortunier (4)

1 Silicon-on-Insulator Technologies (SOITEC)
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
4 CMP-ENSMSE - Centre Microélectronique de Provence - Site Georges Charpak (CMP-GC)

Hydrogen implantation in silicon and subsequent thermal anneal result in the formation of a wide range of point and extended defects. In particular, characteristic two-dimensional extended defects, i.e. platelets, are formed. The growth of these defects during thermal anneal, related to H migration, induces the development of micro-cracks in Si. In this paper, a time dependence study of H defects during isothermal anneals is performed using SIMS, FTIR and TEM techniques. We calculate the kinetics of H 2 formation based on SIMS depth profiling and FTIR measurements. We show that the splitting is determined by H migration and rearrangement of hydrogenated defects.

Mots clés: hydrogen; implantation; platelets; migration; splitting kinetics

Domaines: Science des matériaux [cond-mat.mtrl-sci]

S. Personnic, A. Tauzin, K.K. Bourdelle, F. Letertre, N. Kernevez, et al.. Time dependence study of hydrogen-induced defects in silicon during thermal anneals. 16th International Conference on Ion Implantation Technology (IIT 2006), Jun 2006, Marseille (France), France. pp.65-68, ⟨10.1063/1.2401463⟩. ⟨hal-01736075⟩