Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops

S. Boninelli (1) , Nikolay Cherkashin (1) , Alain Claverie (1) , Fuccio Cristiano (2)

1 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
2 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique

A detailed study of the transformation of the {113} defects into dislocation loops has been carried out in Ge preamorphized silicon (30keV, 1×1015Ge+/cm2) and annealed at 800°C for time ranging from 15to2700s. The presence of a stable defect, along the ⟨110⟩ directions, formed during the transformation from {113}’s into Frank dislocation loops (FDLs), has been revealed and studied. Performing a detailed transmission electron microscopy analysis in nonconventional zone axes, a 1∕3 [111]-type Burgers vector has been found. These defects are shown to be more stable than {113}’s but less than FDLs.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

S. Boninelli, Nikolay Cherkashin, Alain Claverie, Fuccio Cristiano. Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops . Applied Physics Letters, 2006, 89 (16), pp.161904. ⟨10.1063/1.2361178⟩. ⟨hal-01736076⟩