Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

P. Normand (1) , E. Kapetanakis (1) , P. Dimitrakis (1) , D. Skarlatos (1) , K. Beltsios (2) , D. Tsoukalas (3) , Caroline Bonafos (4) , Gérard Benassayag (4) , Nikolay Cherkashin (5) , Alain Claverie (5) , J.A. van den Berg , V. Soncini , A. Agarwal , M. Ameen , M. Perego , M. Fanciulli

1 NCSR - National Center for Scientific Research "Demokritos"
2 University of Ioannina
3 NTUA - National Technical University of Athens [Athens]
4 CEMES - Centre d'élaboration de matériaux et d'études structurales
5 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme

An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

Domaines: Physique [physics]

P. Normand, E. Kapetanakis, P. Dimitrakis, D. Skarlatos, K. Beltsios, et al.. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2004, 216 (1-4), pp.228-238. ⟨10.1016/j.nimb.2003.11.039⟩. ⟨hal-01736094⟩