Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography

Florian Hüe (1) , Martin Hÿtch (1) , Florent Houdellier (2) , Hugo Bender (3) , Alain Claverie (4)

1 CEMES - Centre d'élaboration de matériaux et d'études structurales
2 CEMES-I3EM - Interférométrie, In situ et Instrumentation pour la Microscopie Electronique
3 IMEC
4 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme

Dark-field holography, a new transmission electron microscopy technique for mapping strain distributions at the nanoscale, is used to characterize strained-silicon n-type transistors with a channel width of 65 nm. The strain in the channel region, which enhances electron mobilities, is engineered by recessed Si0.99C0.01 source and drain stressors. The strain distribution is measured across an array of five transistors over a total area of 1.6 μm wide. The longitudinal tensile strain reaches a maximum of 0.58%±0.02% under the gate oxide. Theoretical strain maps obtained by finite element method agree well with the experimental results.

Domaines: Optique [physics.optics]; Physique des Hautes Energies - Expérience [hep-ex]; Physique Quantique [quant-ph]; Physique des accélérateurs [physics.acc-ph]; Electromagnétisme; Matériaux; Optique / photonique; Traitement du signal et de l'image [eess.SP]

Florian Hüe, Martin Hÿtch, Florent Houdellier, Hugo Bender, Alain Claverie. Strain mapping of tensiley strained silicon transistors with embedded Si1−yCy source and drain by dark-field holography. Applied Physics Letters, 2009, 95 (7), pp.73103 - 73103. ⟨10.1063/1.3192356⟩. ⟨hal-01742020⟩