Interdiffusion and Chemical Reaction at Interfaces by TEM/EELS
Résumé
This chapter shows how research on interdiffusion and chemical reactions in thin films and their interface with semiconductor substrates can be conducted using the transmission electron microscopy (TEM) based method and their coupling with electron energy‐loss spectroscopy (EELS). Analytical TEMs commonly installed nowadays in most materials science laboratories are mainly considered in this study. The discussion is illustrated in the context of the developments of new gate oxides (commonly called higher dielectric constant (HK) materials) for the replacement of SiO2 in metal oxide semiconductor field‐effect transistors (MOSFETs). Literature data from HfO2, which is already integrated in MOSFET production since end of 2007 and of rare earth‐based oxides (REO), is particularly discussed together with results obtained at CEMES.