Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs

C. Strenger (1) , V. Haeublein (1) , T. Enbacher (1) , A. J. Bauer (1) , H. Ryssel (1) , Anna Maria Beltrán (2) , Sylvie Schamm-Chardon (2) , V. Mortet (3) , Eléna Bedel-Pereira (3) , M. . Lefebvre (3) , Fuccio Cristiano (3)

1 Fraunhofer IISB - Fraunhofer Institute for Integrated Systems and Device Technology
2 CEMES - Centre d'élaboration de matériaux et d'études structurales
3 LAAS - Laboratoire d'analyse et d'architecture des systèmes

N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.

Domaines: Physique [physics]; Science des matériaux [cond-mat.mtrl-sci]

C. Strenger, V. Haeublein, T. Enbacher, A. J. Bauer, H. Ryssel, et al.. Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs. Materials Science Forum, 2012, 717-720, pp.437-440. ⟨10.4028/www.scientific.net/MSF.717-720.437⟩. ⟨hal-01745018⟩