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Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001)

Abstract : Er-doped HfO"2 thin films with Er content ranging from 0% to 15% are deposited by atomic layer deposition on native oxide free Ge(001). The crystallographic phase is investigated by X-ray diffraction and is found to depend on the Er%. The cubic fluorite structure develops on Ge for Er% as low as 4% and is stable after annealing at 400^oC in N"2. Microstrain increases with increasing the Er content within the fluorite structure. Time of flight secondary ion mass and electron energy loss spectroscopy evidence a Ge diffusion from the substrate that results in the formation of a Ge-rich interfacial region which does not present a structural discontinuity with the oxide. The diffusion of Ge is enhanced by the annealing and causes a reordering of the crystal lattice. In annealed films the interface defect density measured by low temperature conductance measurements is found to decrease with decreasing the Er content.
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https://hal.archives-ouvertes.fr/hal-01745019
Contributor : Sylvie Schamm-Chardon <>
Submitted on : Tuesday, March 27, 2018 - 7:13:25 PM
Last modification on : Monday, November 23, 2020 - 11:00:09 AM

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C. Wiemer, S. Baldovino, L. Lamagna, M. Perego, Sylvie Schamm-Chardon, et al.. Structural and electrical properties of Er-doped HfO2 and of its interface with Ge (001). Microelectronic Engineering, Elsevier, 2011, 88 (4), pp.415-418. ⟨10.1016/j.mee.2010.10.032⟩. ⟨hal-01745019⟩

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