Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks

D. Tsoutsou (1) , L. Lamagna (1) , S. N. Volkos (1) , A. Molle (1) , S. Baldovino (1) , Sylvie Schamm-Chardon (2) , Pierre-Eugène Coulon (2) , M. Fanciulli (1)

1 Laboratorio Nazionale MDM CNR-INFM
2 CEMES - Centre d'élaboration de matériaux et d'études structurales

Thin LaxZr1−xO2−δ (x=0.25) high permittivity (k) films are grown on Si(100) by atomic layer deposition at 300 °C using (PirCp)3La, (MeCp)2ZrMe(OMe) and O3 species. Their properties are studied by grazing incidence x-ray diffraction, high resolution transmission electron microscopy, electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and electrical measurements on the as-grown films and after vacuum annealing at 600 °C. Annealed films feature resistance to hygroscopicity, a large k value of around 30 and an acceptable leakage current density. A low-k silica-rich interlayer is also evidenced at both pristine and annealed high-k/Si interfaces.

Domaines: Physique [physics]; Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

D. Tsoutsou, L. Lamagna, S. N. Volkos, A. Molle, S. Baldovino, et al.. Atomic layer deposition of LaxZr1-xO2-delta (x=0.25) high-k dielectrics for advanced gate stacks. Applied Physics Letters, 2009, 94 (5), pp.53504 - 53504. ⟨10.1063/1.3075609⟩. ⟨hal-01745031⟩