Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis

V. Ioannou-Sougleridis (1) , P. Dimitrakis (1) , V. Em Vamvakas (1) , P. Normand (1) , Caroline Bonafos (2) , Sylvie Schamm-Chardon (2) , A. Mouti (2) , Gérard Benassayag (2) , Vincent Paillard (2)

1 NCSR - National Center for Scientific Research "Demokritos"
2 CEMES - Centre d'élaboration de matériaux et d'études structurales

Formation of a thin band of silicon nanoparticles within silicon nitride films by low-energy (1 keV) silicon ion implantation and subsequent thermal annealing is demonstrated. Electrical characterization of metal–insulator–semiconductor capacitors reveals that oxide/Si-nanoparticles-nitride/oxide dielectric stacks exhibit enhanced charge transfer characteristics between the substrate and the silicon nitride layer compared to dielectric stacks using unimplanted silicon nitride. Attractive results are obtained in terms of write/erase memory characteristics and data retention, indicating the large potential of the low-energy ion-beam-synthesis technique in SONOS memory technology.

Domaines: Physique [physics]

V. Ioannou-Sougleridis, P. Dimitrakis, V. Em Vamvakas, P. Normand, Caroline Bonafos, et al.. Oxide-nitride-oxide dielectric stacks with Si nanoparticles obtained by low-energy ion beam synthesis. Nanotechnology, 2007, 18 (21), ⟨10.1088/0957-4484/18/21/215204⟩. ⟨hal-01745043⟩