Thermodynamic study and characterization of low pressure chemically vapor deposited silicon oxynitride films from tetraethylorthosilicate, dichlorosilane and ammonia gas mixtures

V Vamvakas (1) , D Davazoglou (1) , R Berjoan (2) , Sylvie Schamm-Chardon (3) , Constantin Vahlas (4)

1 NCSR - National Center for Scientific Research "Demokritos"
2 IMP-CNRS - Institut De Science Et De Génie Des Matériaux Et Procédés
3 CEMES-MEM - Matériaux et dispositifs pour l'Electronique et le Magnétisme
4 CIRIMAT - Centre interuniversitaire de recherche et d'ingenierie des matériaux

This work describes the thermodynamic simulation and the experimental investigation of the chemical vapor deposition of silicon oxide and silicon oxynitride films starting from tetra-ethyl-orthosilicate (TEOS), dichlorosilane (DCS) and ammonia mixtures. The simulation reveals that nitrogen incorporation in the deposited films is possible at 710 °C and 300 mTorr at DCS/TEOS flow ratios above unity. For DCS/TEOS flow ratios less than unity, the deposited films are exclusively composed of silicon dioxide. These predictions were confirmed with Fourier Transform Infrared spectroscopy, X-ray Photoelectron Spectroscopy, Auger Electron Spectroscopy and Electron Energy Loss Spectroscopy measurements.

Mots clés: Chemical vapor deposition; Silicon; Oxynitride films

Domaines: Physique [physics]

V Vamvakas, D Davazoglou, R Berjoan, Sylvie Schamm-Chardon, Constantin Vahlas. Thermodynamic study and characterization of low pressure chemically vapor deposited silicon oxynitride films from tetraethylorthosilicate, dichlorosilane and ammonia gas mixtures. Thin Solid Films, 2003, 429 (1-2), pp.77-83. ⟨10.1016/S0040-6090(03)00061-0⟩. ⟨hal-01745054⟩