Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film

G Garcia , J Casado , J Llibre , M Doudkowski (1) , J Santiso (1) , A Figueras (1) , Sylvie Schamm-Chardon (2) , Dominique Dorignac (2) , C Grigis (2) , M Aguilo (3)

1 ICMAB - Institut de Ciència de Materials de Barcelona
2 CEMES - Centre d'élaboration de matériaux et d'études structurales
3 Universitat Rovira i Virgili

YSZ buffer layers were deposited on silicon and sapphire by MOCVD. The layers deposited on silicon were highly oriented along [100] direction without in-plane orientation, probably because the existence of the SiO2 amorphous interlayer. In contrast, epitaxial YSZ was obtained on (1-102) sapphire showing an inplane texture defined by the following relationships : (100) YSZ // (1-102) sapphire and (110) YSZ // (01-12) sapphire. Subsequently, YBCO films were deposited on YSZ by MOCVD. Structural, morphological and electrical characterization of the superconducting layers were correlated with the in-plane texture of the buffer layers.

Domaines: Physique [physics]

G Garcia, J Casado, J Llibre, M Doudkowski, J Santiso, et al.. Preparation of YBCO on YSZ Layers Deposited on Silicon and Sapphire by MOCVD : Influence of the Intermediate Layer on the Quality of the Superconducting Film. Journal de Physique IV Proceedings, 1995, Proceedings of the Tenth European Conference on Chemical Vapour Deposition, 5 (C5), pp.439-445. ⟨10.1051/jphyscol:1995551⟩. ⟨hal-01745063⟩