Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2

F Loumagne (1) , F Langlais (1) , R Naslain (1) , Sylvie Schamm-Chardon (2) , Dominique Dorignac (2) , Jean Sévely (2)

1 LCTS - Laboratoire des Composites Thermostructuraux
2 CEMES - Centre d'élaboration de matériaux et d'études structurales

The physicochemical properties of SiC-based deposits, obtained from the thermal decomposition of CH3SiCl3(MTS) in hydrogen, under conditions of reduced pressure (P < 20 kPa) and low temperature (T < 1400 K), are studied. The morphology, the structure, the nainostructure and the chemical composition of the deposits are discussed from a kinetic and a thermodynamic point of view. They are closely related to the kinetic control regime (either mass transfer or chemical reactions). The silicon excess has a pronounced influence on the morphology and the nanostructure of the deposits.

Domaines: Physique [physics]

F Loumagne, F Langlais, R Naslain, Sylvie Schamm-Chardon, Dominique Dorignac, et al.. Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3H2. Thin Solid Films, 1995, 254 (1-2), pp.75-82. ⟨10.1016/0040-6090(94)06237-F⟩. ⟨hal-01745064⟩