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Journal articles
Thermoelectric and transport properties of Delafossite CuCrO2:Mg thin films prepared by RF magnetron sputtering
Abstract : P-type Mg doped CuCrO2 thin films have been deposited on fused silica substrates by Radio-Frequency (RF) magnetron sputtering. The as-deposited CuCrO2:Mg thin films have been annealed at different temperatures (from 450 to 650 ◦C) under primary vacuum to obtain the delafossite phase. The annealed samples exhibit 3R delafossite structure. Electrical conductivity σ and Seebeck coefficient S of all annealed films have been measured from 40 to 220 ◦C. The optimized properties have been obtained for CuCrO2:Mg thin film annealed at 550 ◦C. At a measurement temperature of 40 ◦C, this sample exhibited the highest electrical conductivity of 0.60 S·cm−1 with a Seebeck coefficient of +329 µV·K−1. The calculated power factor (PF = σS 2) was 6 µW·m−1·K−2 at 40 ◦C and due to the constant Seebeck coefficient and the increasing electrical conductivity with measurement temperature, it reached 38 µW·m−1·K−2 at 220 ◦C. Moreover, according to measurement of the Seebeck coefficient and electrical conductivity in temperature, we confirmed that CuCrO2:Mg exhibits hopping conduction and degenerates semiconductor behavior. Carrier concentration, Fermi level, and hole effective mass have been discussed.
Cited literature [93 references]
https://hal.archives-ouvertes.fr/hal-01754780
Contributor : Open Archive Toulouse Archive Ouverte (oatao) <>
Submitted on : Friday, March 30, 2018 - 10:22:35 AM
Last modification on : Friday, January 10, 2020 - 9:08:24 PM
Contributor : Open Archive Toulouse Archive Ouverte (oatao) <>
Submitted on : Friday, March 30, 2018 - 10:22:35 AM
Last modification on : Friday, January 10, 2020 - 9:08:24 PM
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