Polarized Raman backscattering selection rules for (hhl)-oriented diamond- and zincblende-type crystals

J.A. Steele (1, 2) , Pascal Puech (3) , R.A. Lewis (1)

1 University of Wollongong [Australia]
2 Centre for Surface Chemistry and Catalysis
3 CEMES-M3 - Matériaux Multi-fonctionnels et Multi-échelles

Due to their interesting orientation-dependent properties, the ability to grow high-index semiconductor crystals and nanostructures extends the design palette for applications based on these materials. Notably, a source containing a systematic reporting of what the Raman tensors are for an arbitrary high-index zincblende material is yet to appear in the literature. Herein, we present the polarized Raman backscattering selection rules for arbitrary (hhl)-oriented diamond- and zincblende-type crystal surfaces and verify their correctness through experiment (up to (115)). Considering the many degrees of freedom available to common polarized micro-Raman scattering instruments, and the unique local orientation of the probed material, we further examine a range of consequences imposed by the selection rules for the Raman backscattering method.

Mots clés: Selection Rules; Semiconductor crystals; Crystal orientation; Local orientations; Orientation dependent; Polarized micro-Raman; Polarized Raman; Raman backscattering; Crystal surfaces; Backscattering; Degrees of freedom (mechanics); Raman scattering; Wide band gap semiconductors; Zinc sulfide

Domaines: Science des matériaux [cond-mat.mtrl-sci]

J.A. Steele, Pascal Puech, R.A. Lewis. Polarized Raman backscattering selection rules for (hhl)-oriented diamond- and zincblende-type crystals. Journal of Applied Physics, 2016, 120 (5), pp.055701. ⟨10.1063/1.4959824⟩. ⟨hal-01756981⟩