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Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions

Abstract : In this article, we investigate the impact of the insertion of either a type I InGaAs or a type II InGaAs/GaAsSb quantum well on the performances of MBE-grown GaAs tunnel junctions (TJs). The devices are designed and simulated using a quantum transport model based on the non-equilibrium Green's function formalism and a 6-band k.p Hamiltonian. We experimentally observe significant improvements of the peak tunneling current density on both heterostructures with a 460-fold increase for a moderately doped GaAs TJ when the InGaAs QW is inserted at the junction interface, and a 3-fold improvement on a highly doped GaAs TJ integrating a type II InGaAs/GaAsSb QW. Thus, the simple insertion of staggered band lineup heterostructures enables us to reach a tunneling current well above the kA cm−2 range, equivalent to the best achieved results for Si-doped GaAs TJs, implying very interesting potential for TJ-based components, such as multi-junction solar cells, vertical cavity surface emitting lasers and tunnel-field effect transistors.
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Contributor : Nicolas Cavassilas <>
Submitted on : Monday, April 9, 2018 - 1:46:07 PM
Last modification on : Friday, April 9, 2021 - 10:16:04 AM



Kevin Louarn, Yann Claveau, Ludovic Marigo-Lombart, Chantal Fontaine, Alexandre Arnoult, et al.. Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions. Journal of Physics D: Applied Physics, IOP Publishing, 2018, 51 (14), pp.145107. ⟨10.1088/1361-6463/aab1de⟩. ⟨hal-01761772⟩



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