Dielectric engineering of nanostructured layers preventing electrostatic charging in thin dielectrics
Résumé
New dielectric-engineering concept is developed intending a net improvement of the performance of dielectric layers under electrical stress. Instead of synthesis of new dielectric materials a new class of dielectric layers that gain their performance from design rather than from composition is established. Two kinds of nanostructured dielectric layers are presented here: (i) silicon oxynitride layers (SiOxNy:H) with gradual variation of their properties (discrete or continuous), and (ii) SiO2 layers with tailored interfaces; a single layer of silver nanoparticles (AgNPs) is embedded in the vicinity of the dielectric free surface. The nanostructured layers exhibit much shorter charge retention times and appear promising candidates for general applications where surface charging of dielectrics must be avoided, in particular for implementation in RF MEMS capacitive switches with electrostatic actuation.
Mots clés
Nanostructured dielectrics
Plasma process
RF MEMS capacitive switches
Silicon nanoparticles
Silicon oxynitride layers
Silver nanoparticles
Silver nanoparticles (AgNps)
Dielectric materials
Silver
Electrostatic actuation
Silicon oxides
Silicon nitride
Nanotechnology
Nanoparticles
Metal nanoparticles
Electrostatics
Electrostatic actuators
Fichier principal
IEEE NMDC 2015-Nanostructured Dielectrics-2 pages.pdf (585.96 Ko)
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