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Conference papers
Photoluminescence enhancement of a silicon nanocrystal plane positioned in the nearfield of a silicon nanowire
Abstract : Semiconductor nanowires have an excellent ability to trap, guide, scatter or absorb light thanks to the presence of specific resonant optical modes. The electromagnetic field-enhancement associated to such effects can be used to modify the luminescence of emitters positioned in the vicinity of the nanowire, as to plasmonic nanoantennas. We show that the photoluminescence of silicon nanocrystals embedded in silica can be enhanced by a factor of about 3 in the presence of a silicon nanowire on the silica surface. This could be the basis of a promising CMOS-compatible process to improve silicon-based light emitting devices. 2D maps of the nanocrystal photoluminescence exhibit different behaviors as function of laser polarization and can be related to the electric field intensity distribution in the nanowire near-field, where the Si-NCs layer is located. Preliminary results of nonlinear optics for imaging the local electric field are presented.
Keywords :
Silicon nanocrystals
Silicon
Semiconductor nanowire
Photoluminescence enhancement
Local electric field
Light emitting devices
Laser polarization
Electromagnetic field enhancement
Electric fields
Electromagnetic field effects
Light
Electromagnetic fields
Luminescence
Light emission
Metamaterial antennas
Nanocrystals
Nanowires
Nonlinear optics
Optical waveguides
Photoluminescence
Silica
Electric-field intensity distribution
https://hal.archives-ouvertes.fr/hal-01763392
Contributor : Céline Smith <>
Submitted on : Wednesday, April 11, 2018 - 9:35:27 AM
Last modification on : Tuesday, February 16, 2021 - 3:33:46 AM
Contributor : Céline Smith <>
Submitted on : Wednesday, April 11, 2018 - 9:35:27 AM
Last modification on : Tuesday, February 16, 2021 - 3:33:46 AM