Novel 3D back-to-back diodes ESD protection

Bertrand Courivaud (1) , Nicolas Nolhier (1) , G. Ferru (2) , Marise Bafleur (1) , Fabrice Caignet (1)

1 LAAS-ESE - Équipe Énergie et Systèmes Embarqués
2 IPDiA

A 3D technology is used to design ESD protection devices. Based on back-to-back diodes, these devices are dedicated to first stage, external ESD protection. The main feature consists in using deep trenches, usually employed to build capacitors, to design 3D diodes. Specific trench configuration improves cumulative ESD stress robustness.

Domaines: Micro et nanotechnologies/Microélectronique

Bertrand Courivaud, Nicolas Nolhier, G. Ferru, Marise Bafleur, Fabrice Caignet. Novel 3D back-to-back diodes ESD protection. Electrical Overstress/Electrostatic Discharge (EOS/ESD) Symposium , Sep 2014, Tucson, AZ, United States. 4p. ⟨hal-01843388⟩