Novel 3D back-to-back diodes ESD protection

Bertrand Courivaud (1, 2) , Nicolas Nolhier (2) , G. Ferru (1) , Marise Bafleur (2) , Fabrice Caignet (2)

1 IPDiA
2 LAAS-ESE - Équipe Énergie et Systèmes Embarqués

A 3D technology is used to design ESD protection devices. These planar bidirectional components, based on back-to-back diodes, are dedicated to first stage, external ESD protection. The main trick consists in using deep trenches, usually employed to perform capacitors, to design 3D diode. These devices should be robust as existing two-dimensional structures regarding ESD stress for a significant area reduction. The specific trench configuration should improve cumulative ESD stress robustness.

Domaines: Micro et nanotechnologies/Microélectronique

Bertrand Courivaud, Nicolas Nolhier, G. Ferru, Marise Bafleur, Fabrice Caignet. Novel 3D back-to-back diodes ESD protection. International ESD Workshop (IEW) , May 2014, Villard de Lans, France. 2p. ⟨hal-01843394⟩