Modelling of interband transitions in GaAs tunnel diode

Kevin Louarn 1, 2 Chantal Fontaine 1 Alexandre Arnoult 3 François Olivie 4 Guy Lacoste 3 Francois Piquemal 5 Alexandre Bounouh 6 Guilhem Almuneau 1
1 LAAS-PHOTO - Équipe Photonique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 LNE - Laboratoire National de Métrologie et d'Essais [Trappes]
3 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
4 LAAS-MICA - Équipe MICrosystèmes d'Analyse
LAAS - Laboratoire d'analyse et d'architecture des systèmes
5 LCM - Laboratoire commun de métrologie LNE-CNAM
6 LCAE - Laboratoire Capteurs et Architectures Electroniques
DM2I - Département Métrologie Instrumentation & Information : DRT/LIST/DM2I
Abstract : In this paper, an improved model for non-local band-to-band tunneling carrier transport is presented and compared to experimental measurement from GaAs tunnel junctions devices. By carefully taking into account the coupling between the conduction band and the light holes valence band, the model is able to predict, with realistic material parameters, the amplitude of the current density throughout the whole tunneling regime. The model suggests that elastic band-to-band tunneling instead of trap-assisted-tunneling is the predominant mechanism in GaAs tunnel junctions, which is of great interest for better understanding and improving III–V multijunction solar cells.
Keywords : tunnel junction multi-junction solar cells band-to-band tunneling Flietner's relation
Document type :
Journal articles
Complete list of metadatas
https://hal.archives-ouvertes.fr/hal-01857640
Contributor : Guilhem Almuneau <>
Submitted on : Thursday, August 16, 2018 - 5:41:14 PM
Last modification on : Saturday, October 26, 2019 - 1:32:11 AM

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CNRS | CNAM | LAAS-TEAM | CEA | CEA-UPSAY | DRT | LNE | INSA-TOULOUSE | LAAS-MICA | LIST | LAAS | LAAS-MICRO-NANO-BIO-TECHNOLOGIES | LAAS-HYPERFREQUENCES-ET-OPTIQUE | LAAS-PHOTO | UNIV-PARIS-SACLAY | UNIV-HESAM | INSA-GROUPE | UNIV-TLSE3 | DM2I | LNE-CNAM | UT1-CAPITOLE | UNIV-TLSE2

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Kevin Louarn, Chantal Fontaine, Alexandre Arnoult, François Olivie, Guy Lacoste, et al.. Modelling of interband transitions in GaAs tunnel diode. Semiconductor Science and Technology, IOP Publishing, 2016, 31 (6), pp.06LT01. ⟨10.1088/0268-1242/31/6/06LT01⟩. ⟨hal-01857640⟩

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