Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors

Ahmet Lale (1) , Auriane Grappin (1) , David Bourrier (2) , Laurent Mazenq (2) , Aurélie Lecestre (2) , Jérôme Launay (1) , Pierre Temple-Boyer (1)

1 LAAS-MICA - Équipe MICrosystèmes d'Analyse
2 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique

We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N + /P/N + nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and "low cost" standard photolithography protocols. Such microdevice will provide new opportunities for biochemical analysis at the micro/nanoscale.

Mots clés: microsensor; nanosensor; potentiometric sensor; microfluidics; gate all-around; pH measurement; ChemFET; finFET; MOSFET; ISFET; silicon nanowire; biosensor

Domaines: Micro et nanotechnologies/Microélectronique

Ahmet Lale, Auriane Grappin, David Bourrier, Laurent Mazenq, Aurélie Lecestre, et al.. Design, realization and characterization of all-arround SiO2/Al2O3gate, suspended silicon nanowire chemical field effect transistors. 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS 2017), Jun 2017, Kaohsiung, Taiwan. 4p., ⟨10.1109/TRANSDUCERS.2017.7994346⟩. ⟨hal-01871397⟩