Design, realization and characterization of silicon nanowire ion sensitive field effect transistors

Ahmet Lale 1 Auriane Grappin 1 Emmanuel Scheid 2 Jérôme Launay 1 Pierre Temple-Boyer 1
1 LAAS-MICA - Équipe MICrosystèmes d'Analyse
LAAS - Laboratoire d'analyse et d'architecture des systèmes
2 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : The aim of our research project is to achieve a potentiometric multi-sensor platform, consisting of ion sensitive field effect transistors ISFET and MOSFET, which channel is a nanowire or a network of horizontal Silicon nanowires and whose gate insulator is alumina Al2O3 deposed by Atomic Layer deposition ALD. This microdevice will provide chemical and biological analyses in the liquid phase, in microfluidic channels.
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Ahmet Lale, Auriane Grappin, Emmanuel Scheid, Jérôme Launay, Pierre Temple-Boyer. Design, realization and characterization of silicon nanowire ion sensitive field effect transistors. IEEE Nanotechnology Materials and Devices Conference, IEEE NMDC 2016, Oct 2016, Toulouse, France. 2p., ⟨10.1109/NMDC.2016.7777159⟩. ⟨hal-01871410⟩

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