Design, realization and characterization of silicon nanowire ion sensitive field effect transistors

Ahmet Lale; Auriane Grappin; Emmanuel Scheid; Jérôme Launay; Pierre Temple-Boyer

Design, realization and characterization of silicon nanowire ion sensitive field effect transistors

Ahmet Lale ¹ Auriane Grappin ¹ Emmanuel Scheid ² Jérôme Launay ¹ Pierre Temple-Boyer ¹

1 LAAS-MICA - Équipe MICrosystèmes d'Analyse

LAAS - Laboratoire d'analyse et d'architecture des systèmes

2 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique

LAAS - Laboratoire d'analyse et d'architecture des systèmes

Abstract : The aim of our research project is to achieve a potentiometric multi-sensor platform, consisting of ion sensitive field effect transistors ISFET and MOSFET, which channel is a nanowire or a network of horizontal Silicon nanowires and whose gate insulator is alumina Al2O3 deposed by Atomic Layer deposition ALD. This microdevice will provide chemical and biological analyses in the liquid phase, in microfluidic channels.

Document type :

Conference papers

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

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https://hal.laas.fr/hal-01871410
Contributor : Pierre Temple-Boyer <>
Submitted on : Monday, September 10, 2018 - 5:32:20 PM
Last modification on : Saturday, October 26, 2019 - 1:36:19 AM
Long-term archiving on : Tuesday, December 11, 2018 - 4:27:58 PM

Abstract IEEE_NMDC_2016_Lale_v...

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Design, realization and characterization of silicon nanowire ion sensitive field effect transistors

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