Potential of BPN as a new negative photoresist for a very thick layer with high aspect ratio

David Bourrier (1) , Ayad Ghannam (2) , Monique Dilhan (1) , Hugues Granier (1)

1 LAAS-TEAM - Service Techniques et Équipements Appliqués à la Microélectronique
2 LAAS-MOST - Équipe Microondes et Opto-microondes pour Systèmes de Télécommunications

The BPN is a negative photoresist, sensitive in the UV at 365 nm and was previously dedicated for Wafer Level Packaging applications. This photoresist offers the advantage of forming thick layers; however, it suffers from low aspect ratio (2:1 declared by the supplier). This work reports the BPN’s technological process that allows forming 200–800 μm thick molds for electroplating purposes. Our results revealed an aspect ratio as high as 17:1 while having vertical sidewalls using conventional photolithography.

Mots clés: Seed Layer; Aspect Ratio; Negative Photoresist Vertical Sidewall; High Aspect Ratio

Domaines: Micro et nanotechnologies/Microélectronique; Matériaux

David Bourrier, Ayad Ghannam, Monique Dilhan, Hugues Granier. Potential of BPN as a new negative photoresist for a very thick layer with high aspect ratio. Microsystem Technologies, 2014, 20 (10-11), pp.2089 - 2096. ⟨10.1007/s00542-014-2071-5⟩. ⟨hal-01873715⟩