Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications

Ida Lucci (1) , Simon Charbonnier (2) , Maxime Vallet (3) , Pascal Turban (2) , Yoan Léger (1) , Tony Rohel (1) , Nicolas Bertru (1) , Antoine Létoublon (1) , Jean-Baptiste Rodriguez (4) , Laurent Cerutti (4) , Eric Tournié (4) , Gilles Patriarche (5) , Anne Ponchet (3) , Laurent Pedesseau (1) , C. Cornet (1)

1 FOTON - Institut des Fonctions Optiques pour les Technologies de l'informatiON
2 IPR - Institut de Physique de Rennes
3 CEMES - Centre d'élaboration de matériaux et d'études structurales
4 NANOMIR - Composants à Nanostructure pour le moyen infrarouge
5 C2N - Centre de Nanosciences et de Nanotechnologies [Marcoussis]

Solar photoelectrochemical (PEC) water-splitting devices have been studied for decades with the aim to convert and store the solar energy into clean hydrogen fuels. Recently GaP-based PEC devices have been proposed, because of the adapted GaP bandgap (2.25eV). Moreover, surface texturation at the electrode level has been investigated to optimize the PEC devices efficiency. In this work, we present a large scale stress-free GaP textured surface grown by Molecular Beam Epitaxy on vicinal Si substrate. We then explain the GaP{114} facets stability by density functional theory, we finally present the advantages of using this textured surface, in water splitting applications.

Domaines: Physique [physics]; Matière Condensée [cond-mat]; Science des matériaux [cond-mat.mtrl-sci]

Ida Lucci, Simon Charbonnier, Maxime Vallet, Pascal Turban, Yoan Léger, et al.. Large scale textured GaP(114) growth on vicinal Si substrate by Molecular Beam Epitaxy for water splitting applications. 20th International Conference on Molecular-Beam Epitaxy (ICMBE 2018), Sep 2018, Shanghai, China. pp.Tu-P-43(S). ⟨hal-01910556⟩