Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation

Viktoryia Uhnevionak (1) , Alex Burenkov (1) , Christian Strenger (1) , Guillermo Ortiz (2) , Vincent Mortet (3) , Eléna Bedel-Pereira (2) , Fuccio Cristiano (2) , Anton J Bauer , Peter Pichler (1)

1 Fraunhofer IIS - Fraunhofer Institute for Integrated Circuits
2 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
3 FZU / CAS - Institute of Physics of the Czech Academy of Sciences

The effect of bulk potential engineering on the transport properties in the channel of SiC MOSFETs has been studied. For this purpose, n-channel SiC MOSFETs have been manufactured with different background doping concentrations and characterized electrically at room temperature by current-voltage as well as by Hall-effect measurements. To interpret the measurements performed, numerical simulations have been carried out using Sentaurus Device of Synopsys. The main finding of the simulation analysis is that the change in the depth of the band-bending has to be considered to explain the doping dependence of SiC MOSFET characteristics.

Domaines: Physique [physics]; Science des matériaux [cond-mat.mtrl-sci]; Sciences de l'ingénieur [physics]; Matériaux; Micro et nanotechnologies/Microélectronique

Viktoryia Uhnevionak, Alex Burenkov, Christian Strenger, Guillermo Ortiz, Vincent Mortet, et al.. Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation. Materials Science Forum, 2015, 821-823, pp.737 - 740. ⟨10.4028/www.scientific.net/msf.821-823.737⟩. ⟨hal-01921384⟩